Self-maps of <Emphasis Type="Italic">S</Emphasis><Superscript>2</Superscript> homotopic to a smooth map with a single <Emphasis Type="Italic">n</Emphasis>-periodic point

We show for which (d,n) ∈ Z×N there exists a smooth self-map f:S² → S² so that deg(f)=d and Fix(fⁿ) is a point.     

Prandtl Number in Classical Hard-Sphere and One-Component Plasma Fluids

The Prandtl number is evaluated for the three-dimensional hard-sphere and one-component plasma fluids, from the dilute weakly coupled regime up to a dense strongly coupled regime near the fluid-solid phase transition. In both cases, numerical values of order unity are obtained. The Prandtl number increases on approaching the freezing point, where it reaches a quasi-universal value for simple dielectric fluids of about ≃1.7. Relations to two-dimensional fluids are briefly discussed.     

K3 surfaces,Picard numbers and Siegel disks

If a K3 surface admits an automorphism with a Siegel disk, then its Picard number is an even integer between 0 and 18. Conversely, using the method of hypergeometric groups, we are able to construct K3 surface automorphisms with Siegel disks that realize all possible Picard numbers. The constructions involve extensive computer searches for appropriate Salem numbers and computations of algebraic numbers arising from holomorphic Lefschetz-type fixed point formulas and related Grothendieck residues.     

Semiconductor Emitters in Entropy Sources for Quantum Random Number Generation

Random number generation (RNG) is needed for a myriad of applications ranging from secure communication encryption to numerical simulations to sports and games. However, generating truly random numbers can be elusive. Pseudorandom bit generation using computer algorithms provides a high random bit generation rate. Nevertheless, the reliance on predefined algorithms makes it deterministic and predictable once initial conditions are known. Relying on physical phenomena (such as measuring electrical noise or even rolling dice) can achieve a less predictable sequence of bits. Furthermore, if the physical phenomena originate from quantum effects, they can be truly random and completely unpredictable due to quantum indeterminacy. Traditionally, physical RNG is significantly slower than pseudorandom techniques. To meet the demand for high-speed RNG with perfect unpredictability, semiconductor light sources are adopted as parts of the sources of randomness, i.e., entropy sources, in quantum RNG (QRNG) systems. The high speed of their noise, the high efficiency, and the small scale of these devices make them ideal for chip-scale QRNG. Here, the applications and recent advances of QRNG are reviewed using semiconductor emitters. Finally, the performance of these emitters is compared and discuss their potential in future technologies.     

图的邻点全和可区别全染色

设f:V(G)∪E(G)→{1,2,…,k}是图G的一个正常k-全染色。令■其中N(x)={y∈V(G)|xy∈E(G)}。对任意的边uv∈E(C),若有Φ(u)≠Φ(v)成立,则称f是图G的一个邻点全和可区别k-全染色。图G的邻点全和可区别全染色中最小的颜色数k叫做G的邻点全和可区别全色数,记为f tndi∑(G)。本文确定了路、圈、星、轮、完全二部图、完全图以及树的邻点全和可区别全色数,同时猜想:简单图G(≠K2)的邻点全和可区别全色数不超过△(G)+2。     

子立方无爪图的单射边色数至多为6

设$G$是一个图. 图$G$的一个单射边染色是指图$G$的一个边染色, 使得距离为$2$的两条边或者在同一个三角形中的两条边染不同的颜色. 图$G$的单射边色数是指图$G$的任意单射边染色所需要的最少颜色数. 关于单射边色数有一个猜想: 任意一个子立方图的单射边色数都不超过$6$. 在本文中, 我们证明了这个猜想对子立方无爪图是成立的, 并且给出图例说明上界$6$是紧的. 同时, 我们的证明隐含了求解这类图不超过$6$种颜色的单射边染色方案的一个线性时间算法.     

符号圈拼接图的零度

令$\eta(\Gamma)$和$c(\Gamma)$是符号图$\Gamma$的零度和基本圈数. 一个符号圈拼接图是指每个块都是圈的连通符号图. 本文证明了对任意符号拼接图$\eta(\Gamma)\le c(\Gamma)+1$成立, 并且刻画了等号成立的极图, 推广了王登银等人(2022)在简单圈拼接图上的结果. 此外, 我们证明了任意的符号拼接图$\eta(\Gamma)\neq c(\Gamma)$, 给出了满足$\eta(\Gamma)=c(\Gamma)-1$的符号拼接图的一些性质并刻画处$\eta(\Gamma)=c(\Gamma)-1$的二部符号拼接图.     

Effect of atmospheric pressure pulsed discharge spatial inhomogeneity on Ar I and H I lines: Electron number density study

The spatial inhomogeneity of pulsed atmospheric pressure discharge in argon is investigated using the electron number density N_e diagnostics procedure applied to asymmetrically broadened Ar I lines. A dedicated fitting procedure is used for describing Ar I 703.0 nm line shape recorded from argon gas discharge and H I (at 486.13 and 656.28 nm) lines recorded from Ar-H₂ gas mixture discharge. The results revealed the change in N_e in both axial and radial directions. The additional Ar I lines at 614.5, 710.7, 731.2, and 731.6 nm, recorded from integral spatial radiation, are analysed as well to confirm the results from the plasma column region. The possibility of using AlO (B²∑⁺–X²∑⁺) and CN (B²∑⁺–X²∑⁺) molecular bands for gas temperature T_g measurements in this type of gas discharge source is demonstrated and T_g used as an input parameter for the N_e diagnostics procedure. For the proper identification of molecular band spectral lines, the Fortrat parabolas are constructed. The results obtained from Ar I 703.0 nm line indicate three different N_e values, with N_e1 ≈ 0.6 × 10¹⁶ cm⁻³, N_e2 ≈ 3.6 × 10¹⁶ cm⁻³, and N_e3 ≈ 19 × 10¹⁶ cm⁻³ measured from the plasma column. These N_e values increase in the cathode and anode region.     

充分发展湍流场中Pr数对被动标量输运的影响

采用直接数值模拟方法,研究壁湍流中分子Pr数对湍流被动标量输运的影响.发现在槽道湍流的外层,湍流雷诺平均普朗特数PrT与分子普朗特数的倒数呈线性关系;湍流亚格子普朗特数PrT与分子普朗特数的关系较为复杂,在分子普朗特数为1附近时,湍流亚格子Prt数出现极小值.